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 SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2187
(F10S50VX2)
500V 10A
FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The APPLICATION
*oe Switching power supply of AC 100V input
OUTLINE DIMENSIONS
Case : E-pack
Case : STO-220
(Unit : mm)
*oe High voltage power supply *oe Inverter
RATINGS
*oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current* DC*j i ID Continuous Drain Current* Peak) i IDP Continuous Source Current* DC*j i IS Total Power Dissipation PT Single Pulse Avalanche Current IAS Tch= 25*Z Ratings -55*150 150 500 *}30 10 30 10 60 10 Unit *Z V
A W A
Copyright & Copy;2000 Shindengen Electr
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranconductance gfs Static Drain-Source On-tate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forwade Voltage jc Themal Resistance Qg Total Gate Charge Ciss Input Capacitance Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton toff Turn-Off Time Conditions
2SK2187 ( F10S50VX2 )
Min. 500 Typ. Max. 250 0.1 2.4 2.5 6.3 0.8 3.0 Unit V A
ID = 1mA, VGS = 0V VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 5A VDS = 10V, VGS = 0V, f = 1MHZ ID = 5A, VGS = 10V, RL = 30
30 890 70 200 70 140
S 1.0 3.5 V 1.5 2.08 / nC pF 110 220 ns
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK2187
20 Tc = -55C
Transfer Characteristics
25C
15
Drain Current ID [A]
100C 150C 10
5 VDS = 25V pulse test TYP 0 5 10 15 20
0
Gate-Source Voltage VGS [V]
2SK2187
10
Static Drain-Source On-state Resistance
Static Drain-Source On-state Resistance RDS(ON) []
ID = 5A 1
0.1
VGS = 10V pulse test TYP -50 0 50 100 150
Case Temperature Tc [C]
2SK2187
6
Gate Threshold Voltage
5
Gate Threshold Voltage VTH [V]
4
3
2
1 VDS = 10V ID = 1mA TYP -50 0 50 100 150
0
Case Temperature Tc [C]
2SK2187
100
Safe Operating Area
10
Drain Current ID [A]
100s 200s 1 R DS(ON) limit
1ms
10ms 0.1 DC
Tc = 25C Single Pulse 0.01 1 10 100 1000
Drain-Source Voltage VDS [V]
2SK2187
Transient Thermal Impedance
10
1
Transient Thermal Impedance jc(t) [C/W]
0.1
0.01 10-4 10-3
10-2
10-1
100
101
Time t [s]
2SK2187
10000
Capacitance
Capacitance Ciss Coss Crss [pF]
1000
Ciss
Coss 100
Crss
f=1MHz Tc=25C TYP 10 0 20 40 60 80 100
Drain-Source Voltage VDS [V]
2SK2187
100
Power Derating
80
Power Derating [%]
60
40
20
0
0
50
100
150
Case Temperature Tc [C]
2SK2187
500
Gate Charge Characteristics
20
Drain-Source Voltage VDS [V]
15 VDD = 400V 300 200V 100V 10 200 VGS
5 100 ID = 10A TYP 0 0 10 20 30 40 0 50
Gate Charge Qg [nC]
Gate-Source Voltage VGS [V]
400
VDS


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